Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

RS kodas: 896-2647Gamintojas: ToshibaGamintojo kodas: TK10A80E,S4X(S
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Serija

TK

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

4.5mm

Aukštis

15mm

Kilmės šalis

China

Produkto aprašymas

MOSFET Transistors, Toshiba

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Sandėlio informacija laikinai nepasiekiama.

€ 5,94

€ 1,188 Each (In a Pack of 5) (be PVM)

€ 7,19

€ 1,437 Each (In a Pack of 5) (su PVM)

Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S
sticker-462

€ 5,94

€ 1,188 Each (In a Pack of 5) (be PVM)

€ 7,19

€ 1,437 Each (In a Pack of 5) (su PVM)

Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kainaPer Pakuotė
5 - 20€ 1,188€ 5,94
25 - 95€ 1,045€ 5,22
100 - 245€ 0,924€ 4,62
250 - 495€ 0,866€ 4,33
500+€ 0,813€ 4,07

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Serija

TK

Pakuotės tipas

TO-220SIS

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Plotis

4.5mm

Aukštis

15mm

Kilmės šalis

China

Produkto aprašymas

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more