Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Output Current
10mA
Kaiščių skaičius
14
Fall Time
90ns
Pakuotės tipas
SO-16
Driver Type
MOSFET
Rise Time
175ns
Minimum Supply Voltage
26V
Number of Drivers
1
Maximum Supply Voltage
26V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
125°C
Ilgis
8.75mm
Aukštis
1.65mm
Standards/Approvals
No
Mount Type
Surface
Automotive Standard
No
Produkto Aprašymas
The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.
The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver.
The device includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit conditions. The same delay set in the two-level turn-off feature is applied at turn-on to prevent pulse width distortion.
The device also includes IGBT desaturation protection and a FAULT status output, and is compatible with both pulse transformer and optocoupler signals.
Sandėlio informacija laikinai nepasiekiama.
€ 4 125,00
€ 1,65 Each (On a Reel of 2500) (be PVM)
€ 4 991,25
€ 1,996 Each (On a Reel of 2500) (su PVM)
2500

€ 4 125,00
€ 1,65 Each (On a Reel of 2500) (be PVM)
€ 4 991,25
€ 1,996 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Output Current
10mA
Kaiščių skaičius
14
Fall Time
90ns
Pakuotės tipas
SO-16
Driver Type
MOSFET
Rise Time
175ns
Minimum Supply Voltage
26V
Number of Drivers
1
Maximum Supply Voltage
26V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
125°C
Ilgis
8.75mm
Aukštis
1.65mm
Standards/Approvals
No
Mount Type
Surface
Automotive Standard
No
Produkto Aprašymas
The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.
The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver.
The device includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit conditions. The same delay set in the two-level turn-off feature is applied at turn-on to prevent pulse width distortion.
The device also includes IGBT desaturation protection and a FAULT status output, and is compatible with both pulse transformer and optocoupler signals.