STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh
Pakuotės tipas
Max247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Ilgis
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
20.3mm
Forward Diode Voltage
1.5V
Kilmės šalis
China
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 41,50
€ 41,50 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 50,22
€ 50,22 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
€ 41,50
€ 41,50 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 50,22
€ 50,22 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
1
Sandėlio informacija laikinai nepasiekiama.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Serija
MDmesh
Pakuotės tipas
Max247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Ilgis
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Aukštis
20.3mm
Forward Diode Voltage
1.5V
Kilmės šalis
China
Produkto aprašymas
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products