Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
68A
Maximum Drain Source Voltage Vds
650V
Serija
ST
Pakuotės tipas
TO-247
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.036Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
450W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
125nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
5.1mm
Aukštis
41.2mm
Ilgis
15.9mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.
Sandėlio informacija laikinai nepasiekiama.
€ 417,00
€ 13,90 Each (In a Tube of 30) (be PVM)
€ 504,57
€ 16,819 Each (In a Tube of 30) (su PVM)
30

€ 417,00
€ 13,90 Each (In a Tube of 30) (be PVM)
€ 504,57
€ 16,819 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
68A
Maximum Drain Source Voltage Vds
650V
Serija
ST
Pakuotės tipas
TO-247
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.036Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
450W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
125nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
5.1mm
Aukštis
41.2mm
Ilgis
15.9mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market.