Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Serija
STW
Pakuotės tipas
TO-247
Mount Type
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
320W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
52.6nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
UL
Plotis
15.8mm
Aukštis
5.1mm
Ilgis
40.92mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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€ 5,60
€ 5,60 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 6,78
€ 6,78 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
€ 5,60
€ 5,60 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 6,78
€ 6,78 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Serija
STW
Pakuotės tipas
TO-247
Mount Type
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
320W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
52.6nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
UL
Plotis
15.8mm
Aukštis
5.1mm
Ilgis
40.92mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
