Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Pakuotės tipas
TO-247
Serija
STW
Mount Type
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.5V
Maksimali darbinė temperatūra
150°C
Ilgis
40.92mm
Aukštis
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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€ 17,80
€ 17,80 Už kiekviena vnt. (tiekiama ant padeklo) (be PVM)
€ 21,54
€ 21,54 Už kiekviena vnt. (tiekiama ant padeklo) (su PVM)
Gamybinė pakuotė (Dėklas)
1
€ 17,80
€ 17,80 Už kiekviena vnt. (tiekiama ant padeklo) (be PVM)
€ 21,54
€ 21,54 Už kiekviena vnt. (tiekiama ant padeklo) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Dėklas)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
30V
Pakuotės tipas
TO-247
Serija
STW
Mount Type
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
118nC
Maximum Power Dissipation Pd
480W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.5V
Maksimali darbinė temperatūra
150°C
Ilgis
40.92mm
Aukštis
5.1mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
