Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-247
Serija
DM6
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Gate Source Voltage Vgs
25V
Maksimali darbinė temperatūra
175°C
Aukštis
20.15mm
Plotis
5.15mm
Ilgis
15.75mm
Standards/Approvals
No
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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€ 186,00
€ 6,20 Each (In a Tube of 30) (be PVM)
€ 225,06
€ 7,502 Each (In a Tube of 30) (su PVM)
30
€ 186,00
€ 6,20 Each (In a Tube of 30) (be PVM)
€ 225,06
€ 7,502 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-247
Serija
DM6
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Gate Source Voltage Vgs
25V
Maksimali darbinė temperatūra
175°C
Aukštis
20.15mm
Plotis
5.15mm
Ilgis
15.75mm
Standards/Approvals
No
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
