STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z

RS kodas: 761-0617Gamintojas: STMicroelectronicsGamintojo kodas: STW12NK90Z
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-247

Serija

MDmesh, SuperMESH

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

880 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.75mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

113 nC @ 10 V

Plotis

5.15mm

Aukštis

20.15mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 6,08

€ 6,08 už 1 vnt. (be PVM)

€ 7,36

€ 7,36 už 1 vnt. (su PVM)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z
Pasirinkite pakuotės tipą
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€ 6,08

€ 6,08 už 1 vnt. (be PVM)

€ 7,36

€ 7,36 už 1 vnt. (su PVM)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 11 A, 900 V, 3-Pin TO-247 STW12NK90Z
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

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kiekisVieneto kaina
1 - 9€ 6,08
10 - 99€ 5,13
100 - 499€ 4,13
500 - 999€ 3,66
1000+€ 3,14

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-247

Serija

MDmesh, SuperMESH

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

880 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.75mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

113 nC @ 10 V

Plotis

5.15mm

Aukštis

20.15mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more