Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Serija
STPSC
Rectifier Type
SiC Schottky
Kaiščių skaičius
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimali darbinė temperatūra
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maksimali darbinė temperatūra
175°C
Ilgis
15.75mm
Aukštis
4.6mm
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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€ 2,00
€ 2,00 už 1 vnt. (be PVM)
€ 2,42
€ 2,42 už 1 vnt. (su PVM)
1
€ 2,00
€ 2,00 už 1 vnt. (be PVM)
€ 2,42
€ 2,42 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 2,00 |
| 10 - 99 | € 1,40 |
| 100 - 499 | € 1,20 |
| 500 - 999 | € 1,20 |
| 1000+ | € 1,15 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Serija
STPSC
Rectifier Type
SiC Schottky
Kaiščių skaičius
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimali darbinė temperatūra
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maksimali darbinė temperatūra
175°C
Ilgis
15.75mm
Aukštis
4.6mm
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
