Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
HU3PAK
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Serija
STPSC
Rectifier Type
SiC Schottky
Kaiščių skaičius
7
Peak Reverse Current Ir
1.2mA
Maximum Forward Voltage Vf
1.3V
Minimali darbinė temperatūra
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
1.1kA
Maksimali darbinė temperatūra
175°C
Ilgis
11.9mm
Aukštis
3.6mm
Plotis
14.1mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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€ 3 780,00
€ 6,30 Each (On a Reel of 600) (be PVM)
€ 4 573,80
€ 7,623 Each (On a Reel of 600) (su PVM)
600
€ 3 780,00
€ 6,30 Each (On a Reel of 600) (be PVM)
€ 4 573,80
€ 7,623 Each (On a Reel of 600) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
600
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
HU3PAK
Maximum Continuous Forward Current If
30A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Serija
STPSC
Rectifier Type
SiC Schottky
Kaiščių skaičius
7
Peak Reverse Current Ir
1.2mA
Maximum Forward Voltage Vf
1.3V
Minimali darbinė temperatūra
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
1.1kA
Maksimali darbinė temperatūra
175°C
Ilgis
11.9mm
Aukštis
3.6mm
Plotis
14.1mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
