Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Pakuotės tipas
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Kaiščių skaičius
2
Maximum Forward Voltage Vf
2.25V
Minimali darbinė temperatūra
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Maksimali darbinė temperatūra
175°C
Standards/Approvals
RoHS
Plotis
10.58mm
Ilgis
15.95mm
Aukštis
4.3mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
Sandėlio informacija laikinai nepasiekiama.
€ 8 700,00
€ 8,70 Each (On a Reel of 1000) (be PVM)
€ 10 527,00
€ 10,527 Each (On a Reel of 1000) (su PVM)
1000

€ 8 700,00
€ 8,70 Each (On a Reel of 1000) (be PVM)
€ 10 527,00
€ 10,527 Each (On a Reel of 1000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
1000

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Diode
Mount Type
Surface
Pakuotės tipas
TO-263
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Kaiščių skaičius
2
Maximum Forward Voltage Vf
2.25V
Minimali darbinė temperatūra
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
120A
Peak Reverse Current Ir
60μA
Maksimali darbinė temperatūra
175°C
Standards/Approvals
RoHS
Plotis
10.58mm
Ilgis
15.95mm
Aukštis
4.3mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.