Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Pakuotės tipas
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Serija
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Kaiščių skaičius
2
Minimali darbinė temperatūra
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maksimali darbinė temperatūra
175°C
Standards/Approvals
RoHS
Ilgis
15.9mm
Aukštis
41.2mm
Automotive Standard
AEC-Q101
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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€ 255,00
€ 8,50 Each (In a Tube of 30) (be PVM)
€ 308,55
€ 10,285 Each (In a Tube of 30) (su PVM)
30
€ 255,00
€ 8,50 Each (In a Tube of 30) (be PVM)
€ 308,55
€ 10,285 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMount Type
Through Hole
Product Type
Rectifier & Schottky Diode
Pakuotės tipas
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Serija
STPS
Diode Configuration
Single
Rectifier Type
Rectifier Diode
Kaiščių skaičius
2
Minimali darbinė temperatūra
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maksimali darbinė temperatūra
175°C
Standards/Approvals
RoHS
Ilgis
15.9mm
Aukštis
41.2mm
Automotive Standard
AEC-Q101
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
