Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Serija
STPS
Rectifier Type
Rectifier Diode
Kaiščių skaičius
2
Minimali darbinė temperatūra
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maksimali darbinė temperatūra
175°C
Ilgis
15.9mm
Aukštis
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn off behaviour is independent of temperature.
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€ 252,00
€ 8,40 Each (In a Tube of 30) (be PVM)
€ 304,92
€ 10,164 Each (In a Tube of 30) (su PVM)
30
€ 252,00
€ 8,40 Each (In a Tube of 30) (be PVM)
€ 304,92
€ 10,164 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Serija
STPS
Rectifier Type
Rectifier Diode
Kaiščių skaičius
2
Minimali darbinė temperatūra
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maksimali darbinė temperatūra
175°C
Ilgis
15.9mm
Aukštis
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
