Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
TO-220AC
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Serija
STPSC10065
Rectifier Type
Schottky
Kaiščių skaičius
2
Peak Reverse Current Ir
130μA
Maximum Forward Voltage Vf
1.65V
Minimali darbinė temperatūra
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
48A
Maksimali darbinė temperatūra
175°C
Ilgis
10.4mm
Aukštis
15.75mm
Standards/Approvals
ECOPACK, UL94 V0
Automotive Standard
No
Produkto Aprašymas
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Sandėlio informacija laikinai nepasiekiama.
€ 120,00
€ 2,40 Each (In a Tube of 50) (be PVM)
€ 145,20
€ 2,904 Each (In a Tube of 50) (su PVM)
50
€ 120,00
€ 2,40 Each (In a Tube of 50) (be PVM)
€ 145,20
€ 2,904 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Pakuotės tipas
TO-220AC
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Serija
STPSC10065
Rectifier Type
Schottky
Kaiščių skaičius
2
Peak Reverse Current Ir
130μA
Maximum Forward Voltage Vf
1.65V
Minimali darbinė temperatūra
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
48A
Maksimali darbinė temperatūra
175°C
Ilgis
10.4mm
Aukštis
15.75mm
Standards/Approvals
ECOPACK, UL94 V0
Automotive Standard
No
Produkto Aprašymas
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
