Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-220
Serija
STP
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
80nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maksimali darbinė temperatūra
150°C
Aukštis
4.6mm
Ilgis
28.9mm
Standards/Approvals
UL
Plotis
10.4mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
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€ 33,00
€ 6,60 Each (In a Pack of 5) (be PVM)
€ 39,93
€ 7,986 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 33,00
€ 6,60 Each (In a Pack of 5) (be PVM)
€ 39,93
€ 7,986 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 6,60 | € 33,00 |
| 50 - 120 | € 6,00 | € 30,00 |
| 125+ | € 5,00 | € 25,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-220
Serija
STP
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
140W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
80nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maksimali darbinė temperatūra
150°C
Aukštis
4.6mm
Ilgis
28.9mm
Standards/Approvals
UL
Plotis
10.4mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. This MOSFET is Recommended for flyback topology, based applications such as LED lighting, chargers and adapters. Provide more power density reducing both BOM cost and size of the board.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
