Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Ilgis
10.4mm
Aukštis
15.75mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Sandėlio informacija laikinai nepasiekiama.
€ 82,50
€ 1,65 Each (In a Tube of 50) (be PVM)
€ 99,82
€ 1,996 Each (In a Tube of 50) (su PVM)
50

€ 82,50
€ 1,65 Each (In a Tube of 50) (be PVM)
€ 99,82
€ 1,996 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Ilgis
10.4mm
Aukštis
15.75mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.