STMicroelectronics STripFET II N-Channel MOSFET, 55 A, 60 V, 3-Pin TO-220 STP55NF06L
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Serija
STripFET II
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 54,62
€ 1,092 Each (In a Tube of 50) (be PVM)
€ 66,09
€ 1,321 Each (In a Tube of 50) (su PVM)
50
€ 54,62
€ 1,092 Each (In a Tube of 50) (be PVM)
€ 66,09
€ 1,321 Each (In a Tube of 50) (su PVM)
50
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,092 | € 54,62 |
| 100 - 450 | € 0,838 | € 41,90 |
| 500 - 950 | € 0,71 | € 35,48 |
| 1000 - 4950 | € 0,593 | € 29,64 |
| 5000+ | € 0,558 | € 27,88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Serija
STripFET II
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Plotis
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.15mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products