Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-LL
Serija
STP50N60DM6
Mount Type
Through Hole
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Aukštis
4.4mm
Ilgis
28.9mm
Standards/Approvals
No
Plotis
10mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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€ 215,00
€ 4,30 Each (In a Tube of 50) (be PVM)
€ 260,15
€ 5,203 Each (In a Tube of 50) (su PVM)
50
€ 215,00
€ 4,30 Each (In a Tube of 50) (be PVM)
€ 260,15
€ 5,203 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
36A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-LL
Serija
STP50N60DM6
Mount Type
Through Hole
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
80mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Aukštis
4.4mm
Ilgis
28.9mm
Standards/Approvals
No
Plotis
10mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
