STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150

RS kodas: 761-0588Gamintojas: STMicroelectronicsGamintojo kodas: STP4N150
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Pakuotės tipas

TO-220

Serija

MDmesh

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

30 nC @ 10 V

Plotis

4.6mm

Aukštis

15.75mm

Produkto aprašymas

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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€ 5,20

€ 5,20 už 1 vnt. (be PVM)

€ 6,29

€ 6,29 už 1 vnt. (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150
Pasirinkite pakuotės tipą
sticker-462

€ 5,20

€ 5,20 už 1 vnt. (be PVM)

€ 6,29

€ 6,29 už 1 vnt. (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-220 STP4N150

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Pakuotės tipas

TO-220

Serija

MDmesh

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

30 nC @ 10 V

Plotis

4.6mm

Aukštis

15.75mm

Produkto aprašymas

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more