Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
195mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Aukštis
15.75mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
4.6mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Sandėlio informacija laikinai nepasiekiama.
€ 182,50
€ 3,65 Each (In a Tube of 50) (be PVM)
€ 220,82
€ 4,416 Each (In a Tube of 50) (su PVM)
50

€ 182,50
€ 3,65 Each (In a Tube of 50) (be PVM)
€ 220,82
€ 4,416 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
195mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Aukštis
15.75mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
4.6mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.