Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Serija
MDmesh M5
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-25, +25V
Maximum Power Dissipation Pd
90W
Forward Voltage Vf
1.5V
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
4.6mm
Aukštis
15.75mm
Ilgis
10.4mm
Automotive Standard
No
Produkto Aprašymas
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Sandėlio informacija laikinai nepasiekiama.
€ 3,10
€ 3,10 už 1 vnt. (be PVM)
€ 3,75
€ 3,75 už 1 vnt. (su PVM)
Standartas
1
€ 3,10
€ 3,10 už 1 vnt. (be PVM)
€ 3,75
€ 3,75 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
13A
Maximum Drain Source Voltage Vds
550V
Serija
MDmesh M5
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-25, +25V
Maximum Power Dissipation Pd
90W
Forward Voltage Vf
1.5V
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
4.6mm
Aukštis
15.75mm
Ilgis
10.4mm
Automotive Standard
No
Produkto Aprašymas
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
