Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
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Sandėlio informacija laikinai nepasiekiama.
€ 155,00
€ 3,10 Each (In a Tube of 50) (be PVM)
€ 187,55
€ 3,751 Each (In a Tube of 50) (su PVM)
50
€ 155,00
€ 3,10 Each (In a Tube of 50) (be PVM)
€ 187,55
€ 3,751 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Pakuotės tipas
TO-220
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
