Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Pakuotės tipas
TO-220
Serija
STripFET F7
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
158W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
175°C
Aukštis
9.15mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
4.6mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Sandėlio informacija laikinai nepasiekiama.
€ 13,00
€ 2,60 Each (In a Pack of 5) (be PVM)
€ 15,73
€ 3,146 Each (In a Pack of 5) (su PVM)
Standartas
5

€ 13,00
€ 2,60 Each (In a Pack of 5) (be PVM)
€ 15,73
€ 3,146 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5

| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 2,60 | € 13,00 |
| 50 - 120 | € 2,30 | € 11,50 |
| 125+ | € 1,90 | € 9,50 |
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Pakuotės tipas
TO-220
Serija
STripFET F7
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
158W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
175°C
Aukštis
9.15mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
4.6mm
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.