Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Pakuotės tipas
SOT-223
Serija
STN6N60M2
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Ilgis
6.8mm
Aukštis
1.8mm
Standards/Approvals
No
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Sandėlio informacija laikinai nepasiekiama.
€ 1 312,00
€ 0,328 Each (On a Reel of 4000) (be PVM)
€ 1 587,52
€ 0,397 Each (On a Reel of 4000) (su PVM)
4000

€ 1 312,00
€ 0,328 Each (On a Reel of 4000) (be PVM)
€ 1 587,52
€ 0,397 Each (On a Reel of 4000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
4000

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Pakuotės tipas
SOT-223
Serija
STN6N60M2
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Minimali darbinė temperatūra
-55°C
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Ilgis
6.8mm
Aukštis
1.8mm
Standards/Approvals
No
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.