Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Pakuotės tipas
PowerFLAT
Serija
STripFET
Mount Type
Surface
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maksimali darbinė temperatūra
175°C
Transistor Configuration
Single
Aukštis
0.95mm
Ilgis
6.2mm
Standards/Approvals
No
Plotis
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Produkto Aprašymas
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
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€ 11,00
€ 1,10 Each (In a Pack of 10) (be PVM)
€ 13,31
€ 1,331 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 11,00
€ 1,10 Each (In a Pack of 10) (be PVM)
€ 13,31
€ 1,331 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 1,10 | € 11,00 |
| 100 - 490 | € 0,748 | € 7,48 |
| 500+ | € 0,613 | € 6,13 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
30V
Pakuotės tipas
PowerFLAT
Serija
STripFET
Mount Type
Surface
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
25mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
50W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
4.5nC
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
1.1V
Maksimali darbinė temperatūra
175°C
Transistor Configuration
Single
Aukštis
0.95mm
Ilgis
6.2mm
Standards/Approvals
No
Plotis
5.1mm
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Produkto Aprašymas
This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
