Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
PowerFLAT
Mount Type
Surface
Kaiščių skaičius
5
Maximum Drain Source Resistance Rds
215mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Aukštis
0.9mm
Ilgis
8.1mm
Standards/Approvals
No
Plotis
8.1mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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€ 7 650,00
€ 2,55 Each (On a Reel of 3000) (be PVM)
€ 9 256,50
€ 3,086 Each (On a Reel of 3000) (su PVM)
3000
€ 7 650,00
€ 2,55 Each (On a Reel of 3000) (be PVM)
€ 9 256,50
€ 3,086 Each (On a Reel of 3000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
PowerFLAT
Mount Type
Surface
Kaiščių skaičius
5
Maximum Drain Source Resistance Rds
215mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
24nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maksimali darbinė temperatūra
150°C
Aukštis
0.9mm
Ilgis
8.1mm
Standards/Approvals
No
Plotis
8.1mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
