Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Pakuotės tipas
PowerFLAT
Serija
STripFET F7
Mount Type
Surface
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
175°C
Aukštis
0.95mm
Ilgis
6.15mm
Plotis
5.2mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
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JOIN FOR FREE
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Sandėlio informacija laikinai nepasiekiama.
€ 14,75
€ 2,95 Each (In a Pack of 5) (be PVM)
€ 17,85
€ 3,57 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 14,75
€ 2,95 Each (In a Pack of 5) (be PVM)
€ 17,85
€ 3,57 Each (In a Pack of 5) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
5
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 2,95 | € 14,75 |
| 50 - 120 | € 2,65 | € 13,25 |
| 125+ | € 2,20 | € 11,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Pakuotės tipas
PowerFLAT
Serija
STripFET F7
Mount Type
Surface
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
175°C
Aukštis
0.95mm
Ilgis
6.15mm
Plotis
5.2mm
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
