Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Pakuotės tipas
PowerFLAT
Mount Type
Surface
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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€ 4 500,00
€ 1,50 Each (On a Reel of 3000) (be PVM)
€ 5 445,00
€ 1,815 Each (On a Reel of 3000) (su PVM)
3000
€ 4 500,00
€ 1,50 Each (On a Reel of 3000) (be PVM)
€ 5 445,00
€ 1,815 Each (On a Reel of 3000) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Pakuotės tipas
PowerFLAT
Mount Type
Surface
Kaiščių skaičius
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
