Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
150A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
750W
Pakuotės tipas
Max247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.6V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
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€ 273,00
€ 9,10 Each (In a Tube of 30) (be PVM)
€ 330,33
€ 11,011 Each (In a Tube of 30) (su PVM)
30
€ 273,00
€ 9,10 Each (In a Tube of 30) (be PVM)
€ 330,33
€ 11,011 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
150A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
750W
Pakuotės tipas
Max247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.6V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
