Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Pakuotės tipas
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Serija
HB
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 33,00
€ 4,15 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 39,93
€ 5,02 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
5
€ 33,00
€ 4,15 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 39,93
€ 5,02 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Pakuotės tipas
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Serija
HB
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
