Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Pakuotės tipas
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Serija
HB
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,60
€ 6,60 už 1 vnt. (be PVM)
€ 7,99
€ 7,99 už 1 vnt. (su PVM)
Standartas
1
€ 6,60
€ 6,60 už 1 vnt. (be PVM)
€ 7,99
€ 7,99 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 6,60 |
| 10+ | € 4,15 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
469W
Pakuotės tipas
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Serija
HB
Standards/Approvals
RoHS
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
