Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Ilgis
15.9mm
Aukštis
5.1mm
Standards/Approvals
RoHS
Plotis
21.1mm
Serija
STG
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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€ 67,50
€ 2,25 Each (In a Tube of 30) (be PVM)
€ 81,68
€ 2,722 Each (In a Tube of 30) (su PVM)
30
€ 67,50
€ 2,25 Each (In a Tube of 30) (be PVM)
€ 81,68
€ 2,722 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
86A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
272W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Ilgis
15.9mm
Aukštis
5.1mm
Standards/Approvals
RoHS
Plotis
21.1mm
Serija
STG
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
