Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Ilgis
15.9mm
Aukštis
5.1mm
Standards/Approvals
RoHS
Serija
STG
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Sandėlio informacija laikinai nepasiekiama.
€ 90,00
€ 3,00 Each (In a Tube of 30) (be PVM)
€ 108,90
€ 3,63 Each (In a Tube of 30) (su PVM)
30

€ 90,00
€ 3,00 Each (In a Tube of 30) (be PVM)
€ 108,90
€ 3,63 Each (In a Tube of 30) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
30

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
50A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
167W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.1V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Ilgis
15.9mm
Aukštis
5.1mm
Standards/Approvals
RoHS
Serija
STG
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.