Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
150°C
Ilgis
14.8mm
Aukštis
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Plotis
15.75mm
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 51,00
€ 4,20 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 61,71
€ 5,082 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
10
€ 51,00
€ 4,20 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 61,71
€ 5,082 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
10
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 20 - 98 | € 4,20 | € 8,40 |
| 100 - 198 | € 3,20 | € 6,40 |
| 200+ | € 2,80 | € 5,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
150°C
Ilgis
14.8mm
Aukštis
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Plotis
15.75mm
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
