Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Minimali darbinė temperatūra
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maksimali darbinė temperatūra
175°C
Aukštis
20.15mm
Standards/Approvals
RoHS
Serija
HB
Ilgis
15.75mm
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 6,80
€ 3,40 Each (In a Pack of 2) (be PVM)
€ 8,23
€ 4,114 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 6,80
€ 3,40 Each (In a Pack of 2) (be PVM)
€ 8,23
€ 4,114 Each (In a Pack of 2) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Minimali darbinė temperatūra
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maksimali darbinė temperatūra
175°C
Aukštis
20.15mm
Standards/Approvals
RoHS
Serija
HB
Ilgis
15.75mm
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
