Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maksimali darbinė temperatūra
150°C
Aukštis
20.15mm
Ilgis
15.75mm
Standards/Approvals
JEDEC
Plotis
5.15mm
Serija
SMPS
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 3,75
€ 3,75 už 1 vnt. (be PVM)
€ 4,54
€ 4,54 už 1 vnt. (su PVM)
Standartas
1
€ 3,75
€ 3,75 už 1 vnt. (be PVM)
€ 4,54
€ 4,54 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 3,75 |
| 10 - 99 | € 2,10 |
| 100 - 599 | € 1,70 |
| 600+ | € 1,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
54A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Pakuotės tipas
TO-247
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
70ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.7V
Maksimali darbinė temperatūra
150°C
Aukštis
20.15mm
Ilgis
15.75mm
Standards/Approvals
JEDEC
Plotis
5.15mm
Serija
SMPS
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
