Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Pakuotės tipas
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Kaiščių skaičius
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Ilgis
4mm
Aukštis
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Sandėlio informacija laikinai nepasiekiama.
€ 26,30
€ 26,30 už 1 vnt. (be PVM)
€ 31,82
€ 31,82 už 1 vnt. (su PVM)
Standartas
1

€ 26,30
€ 26,30 už 1 vnt. (be PVM)
€ 31,82
€ 31,82 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Pakuotės tipas
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Kaiščių skaičius
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
175°C
Ilgis
4mm
Aukštis
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Kilmės šalis
China
Produkto Aprašymas
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.