Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Pakuotės tipas
TO-220
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maksimali darbinė temperatūra
175°C
Aukštis
9.15mm
Ilgis
10.4mm
Standards/Approvals
No
Serija
Trench Gate Field Stop
Energy Rating
221mJ
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 10,50
€ 1,05 Each (In a Pack of 10) (be PVM)
€ 12,70
€ 1,27 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 10,50
€ 1,05 Each (In a Pack of 10) (be PVM)
€ 12,70
€ 1,27 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Pakuotės tipas
TO-220
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maksimali darbinė temperatūra
175°C
Aukštis
9.15mm
Ilgis
10.4mm
Standards/Approvals
No
Serija
Trench Gate Field Stop
Energy Rating
221mJ
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
