Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Pakuotės tipas
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maksimali darbinė temperatūra
175°C
Aukštis
26.7mm
Ilgis
15.7mm
Standards/Approvals
ECOPACK
Plotis
5.7mm
Serija
V
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 7,40
€ 3,70 Each (In a Pack of 2) (be PVM)
€ 8,95
€ 4,477 Each (In a Pack of 2) (su PVM)
Standartas
2
€ 7,40
€ 3,70 Each (In a Pack of 2) (be PVM)
€ 8,95
€ 4,477 Each (In a Pack of 2) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
2
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 18 | € 3,70 | € 7,40 |
| 20 - 98 | € 3,05 | € 6,10 |
| 100 - 198 | € 2,30 | € 4,60 |
| 200+ | € 2,05 | € 4,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Pakuotės tipas
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Maksimali darbinė temperatūra
175°C
Aukštis
26.7mm
Ilgis
15.7mm
Standards/Approvals
ECOPACK
Plotis
5.7mm
Serija
V
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
