Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Pakuotės tipas
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maksimali darbinė temperatūra
150°C
Standards/Approvals
JEDEC JESD97
Ilgis
10.4mm
Serija
Powermesh
Aukštis
16.4mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 48,60
€ 0,972 Each (In a Tube of 50) (be PVM)
€ 58,81
€ 1,176 Each (In a Tube of 50) (su PVM)
50
€ 48,60
€ 0,972 Each (In a Tube of 50) (be PVM)
€ 58,81
€ 1,176 Each (In a Tube of 50) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
56W
Pakuotės tipas
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Kaiščių skaičius
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maksimali darbinė temperatūra
150°C
Standards/Approvals
JEDEC JESD97
Ilgis
10.4mm
Serija
Powermesh
Aukštis
16.4mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
