Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
200A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Pakuotės tipas
ISOTOP
Mount Type
Clamp
Channel Type
Type N
Kaiščių skaičius
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
150°C
Ilgis
38.2mm
Aukštis
12.2mm
Standards/Approvals
ECOPACK, JESD97
Serija
Powermesh
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 29,70
€ 29,70 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 35,94
€ 35,94 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
€ 29,70
€ 29,70 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 35,94
€ 35,94 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
200A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Pakuotės tipas
ISOTOP
Mount Type
Clamp
Channel Type
Type N
Kaiščių skaičius
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimali darbinė temperatūra
-55°C
Maksimali darbinė temperatūra
150°C
Ilgis
38.2mm
Aukštis
12.2mm
Standards/Approvals
ECOPACK, JESD97
Serija
Powermesh
Automotive Standard
No
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
