Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Pakuotės tipas
TO-252
Mount Type
Surface
Channel Type
Type N
Kaiščių skaičius
3
Maximum Gate Emitter Voltage VGEO
±20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maksimali darbinė temperatūra
175°C
Aukštis
2.4mm
Ilgis
6.6mm
Standards/Approvals
RoHS
Plotis
6.2mm
Serija
H
Energy Rating
221mJ
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 8,54
€ 0,854 Each (In a Pack of 10) (be PVM)
€ 10,33
€ 1,033 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 8,54
€ 0,854 Each (In a Pack of 10) (be PVM)
€ 10,33
€ 1,033 Each (In a Pack of 10) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Pakuotės tipas
TO-252
Mount Type
Surface
Channel Type
Type N
Kaiščių skaičius
3
Maximum Gate Emitter Voltage VGEO
±20 V
Minimali darbinė temperatūra
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maksimali darbinė temperatūra
175°C
Aukštis
2.4mm
Ilgis
6.6mm
Standards/Approvals
RoHS
Plotis
6.2mm
Serija
H
Energy Rating
221mJ
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
