Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
650V
Serija
MDmesh M5
Pakuotės tipas
TO-220FP
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.34Ω
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maksimali darbinė temperatūra
150°C
Ilgis
10.4mm
Standards/Approvals
No
Aukštis
16.4mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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€ 35,00
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 42,35
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
25
€ 35,00
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 42,35
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Vamzdelis)
25
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
650V
Serija
MDmesh M5
Pakuotės tipas
TO-220FP
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
0.34Ω
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maksimali darbinė temperatūra
150°C
Ilgis
10.4mm
Standards/Approvals
No
Aukštis
16.4mm
Automotive Standard
No
Kilmės šalis
China
Produkto Aprašymas
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
