STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N

RS kodas: 761-2754Gamintojas: STMicroelectronicsGamintojo kodas: STF14NM50N
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

500 V

Serija

MDmesh

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

27 nC @ 10 V

Plotis

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

16.4mm

Produkto aprašymas

N-Channel MDmesh™, 500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Sandėlio informacija laikinai nepasiekiama.

€ 3,70

€ 3,70 už 1 vnt. (be PVM)

€ 4,48

€ 4,48 už 1 vnt. (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N
Pasirinkite pakuotės tipą
sticker-462

€ 3,70

€ 3,70 už 1 vnt. (be PVM)

€ 4,48

€ 4,48 už 1 vnt. (su PVM)

STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220FP STF14NM50N
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 4€ 3,70
5 - 9€ 3,52
10 - 24€ 3,18
25 - 49€ 2,85
50+€ 2,71

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

500 V

Serija

MDmesh

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

27 nC @ 10 V

Plotis

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

10.4mm

Maksimali darbinė temperatūra

+150 °C

Aukštis

16.4mm

Produkto aprašymas

N-Channel MDmesh™, 500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more