Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-220FP
Serija
MDmesh
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
25W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
150°C
Aukštis
16.4mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
4.6mm
Automotive Standard
No
Produkto Aprašymas
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
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Sandėlio informacija laikinai nepasiekiama.
€ 4,85
€ 4,85 už 1 vnt. (be PVM)
€ 5,87
€ 5,87 už 1 vnt. (su PVM)
Standartas
1
€ 4,85
€ 4,85 už 1 vnt. (be PVM)
€ 5,87
€ 5,87 už 1 vnt. (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Standartas
1
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 4,85 |
| 10 - 99 | € 2,55 |
| 100 - 499 | € 2,30 |
| 500+ | € 1,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Pakuotės tipas
TO-220FP
Serija
MDmesh
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
25W
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.2V
Maksimali darbinė temperatūra
150°C
Aukštis
16.4mm
Ilgis
10.4mm
Standards/Approvals
No
Plotis
4.6mm
Automotive Standard
No
Produkto Aprašymas
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
