Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Kaiščių skaičius
16
Pakuotės tipas
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Serija
STDRI
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Sandėlio informacija laikinai nepasiekiama.
€ 6 500,00
€ 2,60 Each (On a Reel of 2500) (be PVM)
€ 7 865,00
€ 3,146 Each (On a Reel of 2500) (su PVM)
2500

€ 6 500,00
€ 2,60 Each (On a Reel of 2500) (be PVM)
€ 7 865,00
€ 3,146 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Kaiščių skaičius
16
Pakuotės tipas
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Serija
STDRI
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.