Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Kaiščių skaičius
16
Fall Time
5ns
Pakuotės tipas
SO-16
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Serija
STDRI
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Sandėlio informacija laikinai nepasiekiama.
€ 6 500,00
€ 2,60 Each (On a Reel of 2500) (be PVM)
€ 7 865,00
€ 3,146 Each (On a Reel of 2500) (su PVM)
2500

€ 6 500,00
€ 2,60 Each (On a Reel of 2500) (be PVM)
€ 7 865,00
€ 3,146 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Kaiščių skaičius
16
Fall Time
5ns
Pakuotės tipas
SO-16
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimali darbinė temperatūra
-40°C
Maksimali darbinė temperatūra
175°C
Standards/Approvals
No
Serija
STDRI
Automotive Standard
No
Produkto Aprašymas
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.