Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-252
Serija
STD
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Maksimali darbinė temperatūra
175°C
Aukštis
2.4mm
Ilgis
6.6mm
Standards/Approvals
UL
Plotis
6.2mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Sandėlio informacija laikinai nepasiekiama.
€ 2 032,50
€ 0,813 Each (On a Reel of 2500) (be PVM)
€ 2 459,32
€ 0,984 Each (On a Reel of 2500) (su PVM)
2500

€ 2 032,50
€ 0,813 Each (On a Reel of 2500) (be PVM)
€ 2 459,32
€ 0,984 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500

Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Pakuotės tipas
TO-252
Serija
STD
Mount Type
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
70W
Maksimali darbinė temperatūra
175°C
Aukštis
2.4mm
Ilgis
6.6mm
Standards/Approvals
UL
Plotis
6.2mm
Automotive Standard
AEC-Q101
Produkto Aprašymas
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.