STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.4 A, 400 V, 3-Pin DPAK STD7NK40ZT4
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 1 600,75
€ 0,64 Each (On a Reel of 2500) (be PVM)
€ 1 936,91
€ 0,774 Each (On a Reel of 2500) (su PVM)
2500
€ 1 600,75
€ 0,64 Each (On a Reel of 2500) (be PVM)
€ 1 936,91
€ 0,774 Each (On a Reel of 2500) (su PVM)
2500
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 2500 - 2500 | € 0,64 | € 1 600,75 |
| 5000+ | € 0,581 | € 1 453,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products