Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
6.2mm
Aukštis
2.17mm
Ilgis
6.6mm
Automotive Standard
No
Produkto Aprašymas
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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€ 2 450,00
€ 0,98 Each (On a Reel of 2500) (be PVM)
€ 2 964,50
€ 1,186 Each (On a Reel of 2500) (su PVM)
2500
€ 2 450,00
€ 0,98 Each (On a Reel of 2500) (be PVM)
€ 2 964,50
€ 1,186 Each (On a Reel of 2500) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Techniniai Dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
800V
Pakuotės tipas
TO-252
Mount Type
Surface
Kaiščių skaičius
3
Maximum Drain Source Resistance Rds
1.73Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
30V
Forward Voltage Vf
1.5V
Minimali darbinė temperatūra
-55°C
Typical Gate Charge Qg @ Vgs
5nC
Maximum Power Dissipation Pd
60W
Maksimali darbinė temperatūra
150°C
Standards/Approvals
No
Plotis
6.2mm
Aukštis
2.17mm
Ilgis
6.6mm
Automotive Standard
No
Produkto Aprašymas
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
