STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 3 A, 900 V, 3-Pin DPAK STD3NK90ZT4
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Plotis
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 17,50
€ 1,75 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 21,18
€ 2,118 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Gamybinė pakuotė (Ritė)
10
€ 17,50
€ 1,75 Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 21,18
€ 2,118 Už kiekviena vnt. (tiekiama riteje) (su PVM)
Sandėlio informacija laikinai nepasiekiama.
Gamybinė pakuotė (Ritė)
10
Sandėlio informacija laikinai nepasiekiama.
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 95 | € 1,75 | € 8,75 |
| 100 - 495 | € 1,35 | € 6,75 |
| 500 - 995 | € 1,15 | € 5,75 |
| 1000+ | € 0,956 | € 4,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Serija
MDmesh, SuperMESH
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Plotis
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
6.6mm
Maksimali darbinė temperatūra
+150 °C
Aukštis
2.4mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products